The Japan Society of Applied Physics

[E-6-4L] Ferroelectric-Gate Thin-Film Transistor Fabricated by Total Solution Deposition Process

T. Miyasako1, B. N. Q. Trinh1, T. Kaneda1, M. Onoue1, P. T. Tue3, E. Tokumitsu1,2, T. Shimoda1,3 (1.JST, 2.Tokyo Tech, 3.JAIST , Japan)

https://doi.org/10.7567/SSDM.2010.E-6-4L