[E-6-4L] Ferroelectric-Gate Thin-Film Transistor Fabricated by Total Solution Deposition Process
T. Miyasako1、B. N. Q. Trinh1、T. Kaneda1、M. Onoue1、P. T. Tue3、E. Tokumitsu1,2、T. Shimoda1,3
(1.JST、2.Tokyo Tech、3.JAIST , Japan)
https://doi.org/10.7567/SSDM.2010.E-6-4L