[E-9-3] High OFF/ON-resistive NiO ReRAM using Post-Plasma-Oxidation (PPO) process

K. Okamoto¹、M. Tada¹、K. Ito¹、Y. Saito¹、S. Ishida¹、H. Hada¹ (1.NEC Corp. , Japan)

https://doi.org/10.7567/SSDM.2010.E-9-3