[E-9-5L] Novel Low Power RRAM with a U-type Cell Structure for Improving Resistive Switching Characteristics

K. C. Ryoo^1,2、J. H. Oh^1,2、S. Jung¹、H. Jeong²、B. G. Park¹ (1.Seoul National Univ.、2.Samsung Electronics Co., Ltd. , Korea)

https://doi.org/10.7567/SSDM.2010.E-9-5L