Ge nanowires for nanoscale nonvolatile memory applications

S. Maikap; S. Majumdar; W. Banerjee; S. Mondal; S. Manna; S. K. Ray

doi:https://doi.org/10.7567/SSDM.2010.F-2-2

2010 International Conference on Solid State Devices and Materials

2010年9月21日〜 2010年9月24日
The University of Tokyo, Tokyo, Japan

[F-2-2] Ge nanowires for nanoscale nonvolatile memory applications

S. Maikap¹、S. Majumdar^1,2、W. Banerjee¹、S. Mondal¹、S. Manna²、S. K. Ray² (1.Chang Gung Univ. , Taiwan、2.Indian Institute of Technology, Kharagpur , India)

https://doi.org/10.7567/SSDM.2010.F-2-2

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