[F-5-3] Time dependent analysis of the applied voltage operation for ensuring 10-year lifetime with SiN MOSFET noise source device
M. Matsumoto1, T. Tanamoto1, S. Yasuda1, R. Ohba1, S. Fujita1
(1.Toshiba Corp. , Japan)
https://doi.org/10.7567/SSDM.2010.F-5-3
