[F-5-3] Time dependent analysis of the applied voltage operation for ensuring 10-year lifetime with SiN MOSFET noise source device

M. Matsumoto¹、T. Tanamoto¹、S. Yasuda¹、R. Ohba¹、S. Fujita¹ (1.Toshiba Corp. , Japan)

https://doi.org/10.7567/SSDM.2010.F-5-3