Fabrication of CMOS-compatible Poly-Si Nanowire FET Sensor

H. Y. Chen; C. Y. Lin; M. C. Chen; H. C. Chen; C. C. Huang; C. H. Chien

doi:https://doi.org/10.7567/SSDM.2010.G-9-2

2010 International Conference on Solid State Devices and Materials

Sep 21, 2010 - Sep 24, 2010
The University of Tokyo, Tokyo, Japan

[G-9-2] Fabrication of CMOS-compatible Poly-Si Nanowire FET Sensor

H. Y. Chen^1,2, C. Y. Lin², M. C. Chen², H. C. Chen², C. C. Huang², C. H. Chien^1,2 (1.National Chiao Tung Univ., 2.National Nano Device Labs. , Taiwan)

https://doi.org/10.7567/SSDM.2010.G-9-2

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