[H-8-4L] High Density and Power Efficient SiP with SCS Technology

E. Hosomi¹、Y. Matsubara¹、Y. Fujimoto¹、M. Oida²、H. Ezawa¹、M. Fukuda¹、K. Numata¹、K. Miyamoto¹ (1.Toshiba Corp.、2.J-Devices Corp. , Japan)

https://doi.org/10.7567/SSDM.2010.H-8-4L