[I-1-2] InP/InGaAs MOSFET with Back-Electrode Structure Bonded on Si Substrate Using a BCB Adhesive Layer

T. Kanazawa¹, R. Terao¹, Y. Yamaguchi¹, S. Ikeda¹, Y. Yonai¹, Y. Miyamoto¹ (1.Tokyo Tech , Japan)

https://doi.org/10.7567/SSDM.2010.I-1-2