[I-1-2] InP/InGaAs MOSFET with Back-Electrode Structure Bonded on Si Substrate Using a BCB Adhesive Layer

T. Kanazawa¹、R. Terao¹、Y. Yamaguchi¹、S. Ikeda¹、Y. Yonai¹、Y. Miyamoto¹ (1.Tokyo Tech , Japan)

https://doi.org/10.7567/SSDM.2010.I-1-2