Source/Drain Engineering for In<sub>0.7</sub>Ga<sub>0.3</sub>As N-MOSFETs: Raised Source/Drain with In Situ Doping for Series Resistance Reduction

X. Gong; H. C. Chin; S. M. Koh; L. Wang; Ivana; Z. Zhu; B. Wang; C. K. Chia; Y. C. Yeo

doi:https://doi.org/10.7567/SSDM.2010.I-1-3

[I-1-3] Source/Drain Engineering for In_0.7Ga_0.3As N-MOSFETs: Raised Source/Drain with In Situ Doping for Series Resistance Reduction

X. Gong¹、H. C. Chin¹、S. M. Koh¹、L. Wang¹、 Ivana¹、Z. Zhu¹、B. Wang²、C. K. Chia²、Y. C. Yeo¹ (1.National Univ. of Singapore、2.Inst. of Materials Res. and Engineering, Agency for Sci. Tech. and Res. , Singapore)

https://doi.org/10.7567/SSDM.2010.I-1-3

2010 International Conference on Solid State Devices and Materials

[I-1-3] Source/Drain Engineering for In0.7Ga0.3As N-MOSFETs: Raised Source/Drain with In Situ Doping for Series Resistance Reduction

[I-1-3] Source/Drain Engineering for In_0.7Ga_0.3As N-MOSFETs: Raised Source/Drain with In Situ Doping for Series Resistance Reduction