In situ Silane Surface Passivation for Gate-First Undoped AlGaN/GaN HEMTs with Minimum Current Collapse and High-Permittivity Dielectric

X. Liu; H. C. Chin; E. K. F. Low; W. Liu; L. S. Tan; Y. C. Yeo

doi:https://doi.org/10.7567/SSDM.2010.I-2-4

[I-2-4] In situ Silane Surface Passivation for Gate-First Undoped AlGaN/GaN HEMTs with Minimum Current Collapse and High-Permittivity Dielectric

X. Liu¹、H. C. Chin¹、E. K. F. Low¹、W. Liu²、L. S. Tan¹、Y. C. Yeo¹ (1.National University of Singapore、2.Inst. of Materials Res. and Engineering, Agency for Sci. Tech. and Res. , Singapore)

https://doi.org/10.7567/SSDM.2010.I-2-4

2010 International Conference on Solid State Devices and Materials

[I-2-4] In situ Silane Surface Passivation for Gate-First Undoped AlGaN/GaN HEMTs with Minimum Current Collapse and High-Permittivity Dielectric