The Japan Society of Applied Physics

[I-3-5] Defect-free GaAs/AlGaAs Heterostucture Etching Process by Chlorine/Argon Mixed Gas Neutral Beam

X. Y. Wang1,3, C. H. Huang1,3, Y. Ohno1,3, M. Igarashi1,3, A. Murayama2,3, S. Samukawa1,3 (1.Tohoku Univ., 2.Hokkaido Univ., 3.CREST-JST , Japan)

https://doi.org/10.7567/SSDM.2010.I-3-5