Defect-free GaAs/AlGaAs Heterostucture Etching Process by Chlorine/Argon Mixed Gas Neutral Beam

X. Y. Wang; C. H. Huang; Y. Ohno; M. Igarashi; A. Murayama; S. Samukawa

doi:https://doi.org/10.7567/SSDM.2010.I-3-5

2010 International Conference on Solid State Devices and Materials

Sep 21, 2010 - Sep 24, 2010
The University of Tokyo, Tokyo, Japan

[I-3-5] Defect-free GaAs/AlGaAs Heterostucture Etching Process by Chlorine/Argon Mixed Gas Neutral Beam

X. Y. Wang^1,3, C. H. Huang^1,3, Y. Ohno^1,3, M. Igarashi^1,3, A. Murayama^2,3, S. Samukawa^1,3 (1.Tohoku Univ., 2.Hokkaido Univ., 3.CREST-JST , Japan)

https://doi.org/10.7567/SSDM.2010.I-3-5

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