[I-3-5] Defect-free GaAs/AlGaAs Heterostucture Etching Process by Chlorine/Argon Mixed Gas Neutral Beam
X. Y. Wang1,3、C. H. Huang1,3、Y. Ohno1,3、M. Igarashi1,3、A. Murayama2,3、S. Samukawa1,3
(1.Tohoku Univ.、2.Hokkaido Univ.、3.CREST-JST , Japan)
https://doi.org/10.7567/SSDM.2010.I-3-5