Recombination Model at Perimeter of Stacking Faults in 4H-SiC pin Diode with Forward Voltage Drift

K. Nakayama; Y. Sugawara; H. Tsuchida; C. Kimura; H. Aoki

doi:https://doi.org/10.7567/SSDM.2010.I-4-2

[I-4-2] Recombination Model at Perimeter of Stacking Faults in 4H-SiC pin Diode with Forward Voltage Drift

K. Nakayama^1,3、Y. Sugawara¹、H. Tsuchida²、C. Kimura³、H. Aoki³ (1.The Kansai Electric Power Co., Inc.、2.Central Research Inst. Of Electric Power Industry、3.Osaka Univ. , Japan)

https://doi.org/10.7567/SSDM.2010.I-4-2

2010 International Conference on Solid State Devices and Materials

[I-4-2] Recombination Model at Perimeter of Stacking Faults in 4H-SiC pin Diode with Forward Voltage Drift