[I-4-3] Influence of inserting AlN between AlSiON and 4H-SiC interface for the MIS structure on SiC

N. Komatsu¹, T. Satoh¹, M. Honjo¹, T. Futatuki¹, C. Kimura¹, H. Aoki¹ (1.Osaka Univ. , Japan)

https://doi.org/10.7567/SSDM.2010.I-4-3