[I-4-4L] Behavior of in-grown Stacking Faults in 4H-SiC Epitaxial Layer Through Annealing Process

R. Hattori¹、K. Hamano¹、J. Moritani¹、K. Sato¹、T. Oomori¹ (1.Mitsubishi Electric Corp. , Japan)

https://doi.org/10.7567/SSDM.2010.I-4-4L