[I-4-4L] Behavior of in-grown Stacking Faults in 4H-SiC Epitaxial Layer Through Annealing Process

R. Hattori¹, K. Hamano¹, J. Moritani¹, K. Sato¹, T. Oomori¹ (1.Mitsubishi Electric Corp. , Japan)

https://doi.org/10.7567/SSDM.2010.I-4-4L