[I-5-4] Novel Passivation Layer for Improvement of Reliability In Amorphous Indium Gallium Zinc Oxide Thin Film Transistors (TFTs)

S. H. Choi¹、Y. W. Lee¹、J. Y. Kwon¹、M. K. Han¹ (1.Seoul National Univ. , Korea)

https://doi.org/10.7567/SSDM.2010.I-5-4