[J-1-3] Study on Device Parameters of Carbon Nanotube FETs to Realize Steep Subthreshold Slope of less than 60 mV/decade

B. P. Algul¹, T. Kodera², S. Oda², K. Uchida¹ (1.Tokyo Tech, 2.QNERC , Japan)

https://doi.org/10.7567/SSDM.2010.J-1-3