[J-1-3] Study on Device Parameters of Carbon Nanotube FETs to Realize Steep Subthreshold Slope of less than 60 mV/decade

B. P. Algul¹、T. Kodera²、S. Oda²、K. Uchida¹ (1.Tokyo Tech、2.QNERC , Japan)

https://doi.org/10.7567/SSDM.2010.J-1-3