[J-5-5L] Effect of Oxidation-induced Tensile Strain on Gate-all-Around Silicon Nanowire Based Single-electron Transistor Fabricated using Optical Lithography

Y. Sun^1,2, Rusli¹, N. Singh² (1.Nanyang Tech. Univ., 2.Inst. of Microelectronics , Singapore)

https://doi.org/10.7567/SSDM.2010.J-5-5L