The Japan Society of Applied Physics

[J-7-3] Electrical Characterization of InGaAs nanowire MISFETs Fabricated by Dielectric-first Process

Y. Kohashi1, T. Sato1, K. Tomioka1,2, S. Hara1, T. Fukui1, J. Motohisa1 (1.Hokkaido Univ., 2.JST-PRESTO , Japan)

https://doi.org/10.7567/SSDM.2010.J-7-3