[J-7-3] Electrical Characterization of InGaAs nanowire MISFETs Fabricated by Dielectric-first Process

Y. Kohashi¹, T. Sato¹, K. Tomioka^1,2, S. Hara¹, T. Fukui¹, J. Motohisa¹ (1.Hokkaido Univ., 2.JST-PRESTO , Japan)

https://doi.org/10.7567/SSDM.2010.J-7-3