[J-7-3] Electrical Characterization of InGaAs nanowire MISFETs Fabricated by Dielectric-first Process

Y. Kohashi¹、T. Sato¹、K. Tomioka^1,2、S. Hara¹、T. Fukui¹、J. Motohisa¹ (1.Hokkaido Univ.、2.JST-PRESTO , Japan)

https://doi.org/10.7567/SSDM.2010.J-7-3