[J-7-5] C-V Characteristics and Analysis of Undoped Gate-All-Around Nanowire FET Array

R. H. Baek¹, C. K. Baek², S. H. Lee¹, S. D. Suk³, M. Li³, Y. Y. Yeoh³, K. H. Yeo³, D. W. Kim³, J. S. Lee^1,4, D. M. Kim², Y. H. Jeong^1,4 (1.POSTECH, 2.Korea Institute for Advanced Study (KIAS), 3.Samsung Electronics Company, 4.National Center for Nanomaterials and Technology (NCNT) , Korea)

https://doi.org/10.7567/SSDM.2010.J-7-5