Modeling of RESURF LDMOS for Accurate Prediction of Junction Condition on Device Characteristics

T. Saito; T. Tanaka; T. Hayashi; K. Kikuchihara; T. Kanamoto; H. Masuda; M. Miyake; S. Amakawa; H. J. Mattausch; M. Miura-Mattausch

doi:https://doi.org/10.7567/SSDM.2010.K-1-2

[K-1-2] Modeling of RESURF LDMOS for Accurate Prediction of Junction Condition on Device Characteristics

T. Saito^1,2、T. Tanaka¹、T. Hayashi¹、K. Kikuchihara¹、T. Kanamoto²、H. Masuda²、M. Miyake¹、S. Amakawa¹、H. J. Mattausch¹、M. Miura-Mattausch¹ (1.Hiroshima Univ.、2.Renesas Electronics Corp. , Japan)

https://doi.org/10.7567/SSDM.2010.K-1-2

2010 International Conference on Solid State Devices and Materials

[K-1-2] Modeling of RESURF LDMOS for Accurate Prediction of Junction Condition on Device Characteristics