Fabrication of Poly-Si TFT on Polycarbonate Substrate at Temperatures below 135<sup>o</sup>C

G. Nakagawa; N. Kawamoto; T. Imamura; Y. Tomizawa; T. Miyoshi; K. Tadatomo; T. Asano

doi:https://doi.org/10.7567/SSDM.2010.K-8-4

2010 International Conference on Solid State Devices and Materials

Sep 21, 2010 - Sep 24, 2010
The University of Tokyo, Tokyo, Japan

[K-8-4] Fabrication of Poly-Si TFT on Polycarbonate Substrate at Temperatures below 135^oC

G. Nakagawa¹, N. Kawamoto², T. Imamura³, Y. Tomizawa³, T. Miyoshi², K. Tadatomo², T. Asano¹ (1.Kyushu Univ., 2.Yamaguchi Univ., 3.TEIJIN Ltd. , Japan)

https://doi.org/10.7567/SSDM.2010.K-8-4

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2010 International Conference on Solid State Devices and Materials

[K-8-4] Fabrication of Poly-Si TFT on Polycarbonate Substrate at Temperatures below 135oC

[K-8-4] Fabrication of Poly-Si TFT on Polycarbonate Substrate at Temperatures below 135^oC