Fabrication of Ge-MOS Capacitors with High-Quality Interface by Ultra-Thin SiO<sub>2</sub>/GeO<sub>2</sub> Bi-Layer Passivation

2010 International Conference on Solid State Devices and Materials

Sep 21, 2010 - Sep 24, 2010
The University of Tokyo, Tokyo, Japan

K. Hirayama¹, R. Ueno¹, Y. Iwamura¹, K. Yoshino¹, D. Wang¹, H. Yang¹, H. Nakashima¹ (1.Kyushu Univ. , Japan)