Fabrication of Ge-MOS Capacitors with High-Quality Interface by Ultra-Thin SiO<sub>2</sub>/GeO<sub>2</sub> Bi-Layer Passivation

2010 International Conference on Solid State Devices and Materials

2010年9月21日〜 2010年9月24日
The University of Tokyo, Tokyo, Japan

K. Hirayama¹、R. Ueno¹、Y. Iwamura¹、K. Yoshino¹、D. Wang¹、H. Yang¹、H. Nakashima¹ (1.Kyushu Univ. , Japan)