[P-1-12] Improvement of The Property of FET Having The HfO₂/Ge Structure Fabricated by Photo-Assisted MOCVD with Fluorine Treatment

D. Lee¹、H. Imajo¹、T. Kanashima¹、M. Okuyama¹ (1.Osaka Univ. , Japan)

https://doi.org/10.7567/SSDM.2010.P-1-12