The Japan Society of Applied Physics

[P-1-15] Electrical characterization of wafer-bonded germanium-on-insulator substrates using a four-point-probe pseudo-MOSFET

Y. Iwasaki1、Y. Nakamura1、J. Kikkawa1、A. Sakai1、M. Sato2、E. Toyoda2、H. Isogai2、K. Izunome2 (1.Osaka Univ.、2.Covalent Silicon Co., Ltd. , Japan)

https://doi.org/10.7567/SSDM.2010.P-1-15