[P-1-8] In-situ Formation of HfN/HfSiON Gate Stacks with 0.5 nm EOT Utilizing ECR Sputtering on Three-Dimensional Si Structures

T. Sano¹, S. Ohmi¹ (1.Tokyo Tech , Japan)

https://doi.org/10.7567/SSDM.2010.P-1-8