[P-12-1] Power-Aware Bit-Serial Binary Content-Addressable Memory Using Magnetic-Tunnel-Junction-Based Fine-Grained Power-Gating Scheme

S. Matsunaga¹、M. Natsui¹、H. Ohno¹、T. Hanyu¹ (1.Tohoku Univ. , Japan)

https://doi.org/10.7567/SSDM.2010.P-12-1