Lateral High-Voltage 4H-SiC MOSFETs

W. S. Lee; C. W. Lin; M. S. Yang; C. F. Huang; J. Gong; Z. Feng

doi:https://doi.org/10.7567/SSDM.2010.P-14-1

2010 International Conference on Solid State Devices and Materials

Sep 21, 2010 - Sep 24, 2010
The University of Tokyo, Tokyo, Japan

[P-14-1] Lateral High-Voltage 4H-SiC MOSFETs

W. S. Lee¹, C. W. Lin¹, M. S. Yang¹, C. F. Huang¹, J. Gong², Z. Feng³ (1.National Tsing Hua Univ., 2.TongHai Univ. , Taiwan, 3.University of South Carolina , USA)

https://doi.org/10.7567/SSDM.2010.P-14-1

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