[P-3-10] Improvement of High-k/metal gate pMOSFET performances and reliability with optimism Si cap/SiGe channel structure

C. W. Hsu¹, Y. K. Fang¹, C. Y. Chen¹, W. K. Yeh², C. T. Lin³, P. Y. Chen⁴ (1.National Cheng Kung Univ., 2.National Univ. of Kaohsiung, 3.UMC, 4.I-Shou Univ. , Taiwan)

https://doi.org/10.7567/SSDM.2010.P-3-10