[P-3-10] Improvement of High-k/metal gate pMOSFET performances and reliability with optimism Si cap/SiGe channel structure

C. W. Hsu¹、Y. K. Fang¹、C. Y. Chen¹、W. K. Yeh²、C. T. Lin³、P. Y. Chen⁴ (1.National Cheng Kung Univ.、2.National Univ. of Kaohsiung、3.UMC、4.I-Shou Univ. , Taiwan)

https://doi.org/10.7567/SSDM.2010.P-3-10