Characterization the random telegraph noise in 32nm high-k/metal gate CMOSFETs

W. K. Yeh; C. W. Hsu; Y. K. Fang; C. Y. Chen; C. T. Lin; P. Y. Chen

doi:https://doi.org/10.7567/SSDM.2010.P-3-14

2010 International Conference on Solid State Devices and Materials

Sep 21, 2010 - Sep 24, 2010
The University of Tokyo, Tokyo, Japan

[P-3-14] Characterization the random telegraph noise in 32nm high-k/metal gate CMOSFETs

W. K. Yeh¹, C. W. Hsu², Y. K. Fang², C. Y. Chen¹, C. T. Lin³, P. Y. Chen⁴ (1.National Univ. of Kaohsiung, 2.National Cheng Kung Univ., 3.UMC, 4.I-Shou Univ. , Taiwan)

https://doi.org/10.7567/SSDM.2010.P-3-14

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