[P-3-21] Investigation of SACVD-Based STI Process on Electrical Characteristics of Nanoscale NMOSFETs

H. Y. Lin¹, S. L. Wu², C. W. Kuo¹, Y. T. Huang¹, S. J. Chang¹, D. G. Hong², C. Y. Wu², C. T. Huang³, O. Cheng³ (1.National Cheng Kung Univ., 2.Cheng Shiu Univ., 3.United Microelectronics Corp. , Taiwan)

https://doi.org/10.7567/SSDM.2010.P-3-21