[P-3-26L] Electron and hole mobility comparison in a single Ge-MOSFET fabricated on 50 nm-thick GeOI substrate

D. D. Zhao¹, C. H. Lee¹, T. Nishimura^1,2, K. Nagashio^1,2, K. Kita^1,2, A. Toriumi^1,2 (1.Univ. of Tokyo, 2.JST-CREST , Japan)

https://doi.org/10.7567/SSDM.2010.P-3-26L