[P-3-27L] Nanosized-Metal-Grain-Induced Characteristic Fluctuation in 16-nm CMOS Devices Y. Li1,2、C. H. Yu1、M. H. Han1、H. W. Cheng1 (1.National Chiao Tung Univ.、2.National Nano Device Labs. , Taiwan) https://doi.org/10.7567/SSDM.2010.P-3-27L