[P-3-27L] Nanosized-Metal-Grain-Induced Characteristic Fluctuation in 16-nm CMOS Devices

Y. Li^1,2, C. H. Yu¹, M. H. Han¹, H. W. Cheng¹ (1.National Chiao Tung Univ., 2.National Nano Device Labs. , Taiwan)

https://doi.org/10.7567/SSDM.2010.P-3-27L