Technology Computer Aided Design of 65nm SOI MOSFETs through Integrated Process and Device Simulations

E. M. Bazizi; P. F. Fazzini; F. Cristiano; A. Pakfar; C. Tavernier; C. Zechner; N. Zographos; A. Claverie

doi:https://doi.org/10.7567/SSDM.2010.P-3-3

[P-3-3] Technology Computer Aided Design of 65nm SOI MOSFETs through Integrated Process and Device Simulations

E. M. Bazizi^1,2, P. F. Fazzini¹, F. Cristiano¹, A. Pakfar², C. Tavernier², C. Zechner³, N. Zographos³, A. Claverie¹ (1.CNRS-LAAS, 2.STMicroelectronics , France, 3.Synopsys Switzerland LLC LEMES/CNRS , Switzerl)

https://doi.org/10.7567/SSDM.2010.P-3-3

2010 International Conference on Solid State Devices and Materials

[P-3-3] Technology Computer Aided Design of 65nm SOI MOSFETs through Integrated Process and Device Simulations