Technology Computer Aided Design of 65nm SOI MOSFETs through Integrated Process and Device Simulations

E. M. Bazizi; P. F. Fazzini; F. Cristiano; A. Pakfar; C. Tavernier; C. Zechner; N. Zographos; A. Claverie

doi:https://doi.org/10.7567/SSDM.2010.P-3-3

[P-3-3] Technology Computer Aided Design of 65nm SOI MOSFETs through Integrated Process and Device Simulations

E. M. Bazizi^1,2、P. F. Fazzini¹、F. Cristiano¹、A. Pakfar²、C. Tavernier²、C. Zechner³、N. Zographos³、A. Claverie¹ (1.CNRS-LAAS、2.STMicroelectronics , France、3.Synopsys Switzerland LLC LEMES/CNRS , Switzerl)

https://doi.org/10.7567/SSDM.2010.P-3-3

2010 International Conference on Solid State Devices and Materials

[P-3-3] Technology Computer Aided Design of 65nm SOI MOSFETs through Integrated Process and Device Simulations