The Observation of the Random Dopant Fluctuation in Strained-SOI Devices

C. Y. Cheng; E. R. Hsieh; S. S. Chung; R. M. Huang; Y. H. Lin; C. T. Tsai; G. H. Ma; C. W. Liang

doi:https://doi.org/10.7567/SSDM.2010.P-3-5

2010 International Conference on Solid State Devices and Materials

Sep 21, 2010 - Sep 24, 2010
The University of Tokyo, Tokyo, Japan

[P-3-5] The Observation of the Random Dopant Fluctuation in Strained-SOI Devices

C. Y. Cheng¹, E. R. Hsieh¹, S. S. Chung¹, R. M. Huang², Y. H. Lin², C. T. Tsai², G. H. Ma², C. W. Liang² (1.National Chiao Tung Univ., 2.UMC , Taiwan)

https://doi.org/10.7567/SSDM.2010.P-3-5

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