InGaAs and InGaAs-On-Insulator n-Channel MOSFETs Fabricated by Self-Align Gate First Process with Ni/Al<sub>2</sub>O<sub>3</sub> Gate Stacks

S. Lee; R. Iida; S. H. Kim; M. Yokoyama; N. Taoka; Y. Urabe; T. Yasuda; H. Takagi; H. Ishii; N. Miyata; H. Yamada; N. Fukuhara; M. Hata; M. Takenaka; S. Takagi

doi:https://doi.org/10.7567/SSDM.2010.P-3-7

[P-3-7] InGaAs and InGaAs-On-Insulator n-Channel MOSFETs Fabricated by Self-Align Gate First Process with Ni/Al₂O₃ Gate Stacks

S. Lee¹、R. Iida¹、S. H. Kim¹、M. Yokoyama¹、N. Taoka¹、Y. Urabe²、T. Yasuda²、H. Takagi²、H. Ishii²、N. Miyata²、H. Yamada³、N. Fukuhara³、M. Hata³、M. Takenaka¹、S. Takagi¹ (1.Univ. of Tokyo、2.NAIST、3.Sumitomo Chemical Co., Ltd. , Japan)

https://doi.org/10.7567/SSDM.2010.P-3-7

2010 International Conference on Solid State Devices and Materials

[P-3-7] InGaAs and InGaAs-On-Insulator n-Channel MOSFETs Fabricated by Self-Align Gate First Process with Ni/Al2O3 Gate Stacks

[P-3-7] InGaAs and InGaAs-On-Insulator n-Channel MOSFETs Fabricated by Self-Align Gate First Process with Ni/Al₂O₃ Gate Stacks