Investigation of Bias Temperature Instability in HfInZnO Thin Film Transistor

J. S. Chang; S. W. Kim; D. W. Kwon; J. H. Kim; J. C. Park; I. Song; U. I. Jung; C. J. Kim; B. G. Park

doi:https://doi.org/10.7567/SSDM.2010.P-6-14

2010 International Conference on Solid State Devices and Materials

Sep 21, 2010 - Sep 24, 2010
The University of Tokyo, Tokyo, Japan

[P-6-14] Investigation of Bias Temperature Instability in HfInZnO Thin Film Transistor

J. S. Chang¹, S. W. Kim¹, D. W. Kwon¹, J. H. Kim¹, J. C. Park², I. Song², U. I. Jung², C. J. Kim², B. G. Park¹ (1.Seoul National Univ., 2.Samsung Adv. Inst. of Tech. , Korea)

https://doi.org/10.7567/SSDM.2010.P-6-14

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