The Japan Society of Applied Physics

[P-6-14] Investigation of Bias Temperature Instability in HfInZnO Thin Film Transistor

J. S. Chang1、S. W. Kim1、D. W. Kwon1、J. H. Kim1、J. C. Park2、I. Song2、U. I. Jung2、C. J. Kim2、B. G. Park1 (1.Seoul National Univ.、2.Samsung Adv. Inst. of Tech. , Korea)

https://doi.org/10.7567/SSDM.2010.P-6-14